| PART |
Description |
Maker |
| 2SC4672 |
NPN Silicon Epitaxial Silicon Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| 2SC5515 |
Silicon NPN triple diffusion mesa type(For horizontal deflection output) 17 A, 600 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| ST2310HI |
12 A, 600 V, NPN, Si, POWER TRANSISTOR
|
STMICROELECTRONICS
|
| 2N4401-T92-B 2N4401-T92-K 2N4401L-T92-B 2N4401L-T9 |
NPN GENERAL PURPOSE AMPLIFIER 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2N4401TFRNL |
NPN General Purpose Amplifier 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| MMBT4401G-AL3-R MMBT4401-AL3-R MMBT4401G-AE3-R MMB |
NPN GENERAL PURPOSE AMPLIFIER 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Unisonic Technologies Co., Ltd.
|
| P6KE200AG P6KE180ARLG ONSEMICONDUCTOR-P6KE180ARLG |
600 Watt Peak Power Surmetic-40 Transient Voltage Suppressors
600 Watt Peak Power Surmetic -40 Transient Voltage Suppressors
600 W Transient Voltage Suppressor 200 V SUR40 Unidirectional; Package: Surmetic 40, Axial Lead; Container: Bulk; Qty per Container: 1000 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low input capacitance and gate charge
|
STMicroelectronics
|
| 600-052 |
600-052, 600-090, 600-057, 600-083,600-052-1, 600-090-1, 600-057-1 & 600-083-1 Clamping Bands
|
Glenair, Inc.
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| DZT5551-13 |
NPN SURFACE MOUNT TRANSISTOR
600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-4
|
Diodes Incorporated
Diodes, Inc.
|
|
